Room-temperature electroluminescence from electron-hole plasmas in the metal–oxide–silicon tunneling diodes
نویسندگان
چکیده
An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal–oxide–silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrons and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band bending in the Si/oxide interface is responsible for this energy gap reduction. © 2000 American Institute of Physics. @S0003-6951~00!04512-5#
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